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ZXM62N03G
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
I =250 A, V DS = V GS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
30
1.0
1
100
V
A
nA
V
I D =250 μ A, V GS =0V
V DS =30V, V GS =0V
V GS = 20V, V DS =0V
D
Static Drain-Source On-State Resistance R DS(on)
(1)
0.11
0.15
V GS =10V, I D =2.2A
V GS =4.5V, I D =1.1A
Forward Transconductance (1)(3)
g fs
1.1
S
V DS =15V,I D =1.1A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
380
90
30
pF
pF
pF
V DS =25V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
2.9
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
5.6
11.7
6.4
9.6
1.7
2.8
ns
ns
ns
nC
nC
nC
V DD =15V, I D =2.2A
R G =6.0 , V GS =10V
V DS =24V,V GS =10V,
I D =2.2A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
18.8
11.4
0.95
V
ns
nC
T J =25 C, I S =2.2A,
V GS =0V
T J =25 C, I F =2.2A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width = 300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2002
4
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